High-purity Hydrogen is used as a carrier gas to transport metal organic source chemicals into the MOCVD reaction chamber. Power devices are either Gallium Nitride (GaN) or Silicon Carbide (SiC) devices. The performance of GaN devices vary depending on the quantity of oxygen contained in the device structure. Nitrogen is a dopant in SiC devices. Controlling…

Similar to other thin-film manufacturing processes, pure hydrogen is used in combination with silane and with dopant gases in the production of thin-film-transistor liquid crystal display (TFT LCD) panels. Consistent control of impurities is required to ensure the high yields needed for a profitable TFT LCD production operation. Power+Energy HEMS analyzers detect all impurities up…

Hydrogen features in a number of sensitive semiconductor processes where the control of impurities into the sub part-per-billion (ppb) range has a critical impact on device function or yield.  Power+Energy suggest using HEMS™ instruments to verify hydrogen purity prior to its introduction into key processing steps.  Unlike other analysis method, our Hydrogen Elimination Measurement System…

Hydrogen is used in combination with silane to produce amorphous and micro-crystaline silicon layers during the thin film silicon photovoltaic manufacturing process. The electrical output of the resulting solar cell, its efficiency and its lifetime are all affected by the concentration of nitrogen and oxygen atoms contained within the device structure. Control of these impurities…

Hydrogen is used as a carrier gas to transport metal organic source chemicals into the MOCVD reaction chamber. High Brightness LEDs are typically Gallium Nitride (GaN) devices. The performance of a GaN device can vary depending on the oxygen impurity levels in the device structure with higher levels of oxygen lowering intensity and shifting wavelength.…