High-purity Hydrogen is used as a carrier gas to transport metal organic source chemicals into the MOCVD reaction chamber. Power devices are either Gallium Nitride (GaN) or Silicon Carbide (SiC) devices. The performance of GaN devices vary depending on the quantity of oxygen contained in the device structure. Nitrogen is a dopant in SiC devices. Controlling O2 and H2O or N2 levels in the hydrogen carrier gas to sub part-per-billion (ppb) levels is a critical consideration in the manufacture of power devices.
Power+Energy HEMS analyzers detect nitrogen and all oxygen species, O2, H2O, CO, CO2, etc in hydrogen gas with part-per-billion (ppb) levels of resolution. HEMS allows manufacturers to qualify their hydrogen gas and hydrogen gas supply systems before each process run thereby helping to ensure the best possible device yields. HEMS also enables detailed trouble-shooting of H2 supply systems and provides real time data to show when a system can be released for production.
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